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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The onsemi BC849BLT1G is an NPN silicon general-purpose transistor from the BC846ALT1G series, housed in a surface-mount SOT-23 package. It features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 100 mA. The device offers a minimum DC current gain (hFE) of 150 at a collector current of 2.0 mA. Electrical characteristics include a base-emitter saturation voltage of 0.9 V at 100 mA and a transition frequency of 100 MHz. Thermal management allows for a total power dissipation of 225 mW with a junction-to-ambient thermal resistance of 556 °C/W.
Feature Summary
- NPN silicon construction designed for general-purpose amplifier applications
- High DC current gain capability suitable for low-current switching tasks
- Robust electrostatic discharge protection exceeding 4000 V via Human Body Model
Applications
- General-purpose amplification circuits
- Low-power switching applications
- Signal processing stages requiring high gain
Procurement Notes
Verify the specific ordering suffix to confirm packaging configuration and compliance status. Ensure the component matches the required pinout style for the target PCB footprint. Confirm that the device code aligns with the intended electrical performance tier. Check for any automotive-specific prefixes if AEC-Q101 qualification is necessary for the application environment.
Selection Notes
Select this component when a compact NPN transistor with moderate voltage ratings is required. The BC849 variant provides lower breakdown voltages compared to the BC846 series, making it suitable for lower voltage logic interfaces. Consider the thermal resistance limits when designing for high ambient temperatures or dense board layouts.
Part Context
This part belongs to the BC846ALT1G family of general-purpose transistors manufactured by onsemi. The series includes multiple variants differentiated by breakdown voltage and gain ranges. The BC849B specifically denotes the 30 V collector-emitter voltage rating within this lineup.
Replacement Considerations
BC849CLT1G
FAQ
What is the maximum collector-emitter voltage for the BC849BLT1G?
The maximum collector-emitter voltage (VCEO) is 30 V.
What is the minimum DC current gain specified for this device?
The minimum DC current gain (hFE) is 150, measured at a collector current of 2.0 mA and VCE of 5.0 V.
Is the BC849BLT1G qualified for automotive applications?
Standard versions are not explicitly listed as AEC-Q101 qualified; however, devices with the 'S' or 'NSV' prefix are AEC-Q101 qualified and PPAP capable.
