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The BC849C-TP is a single NPN bipolar junction transistor manufactured by Micro Commercial Components. It operates with a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device features a transition frequency of 100 MHz and a maximum power dissipation of 225 mW. DC current gain (hFE) is specified at a minimum of 420 when tested at 2 mA and 5 V. The component supports a junction temperature range from -55°C to 150°C and utilizes the SOT-23 surface-mount package.
Verify the specific suffix against official MCC documentation to confirm exact electrical tolerances and automotive qualification status. Ensure the ordering code matches the required gain bin and package variant. Confirm RoHS compliance details directly from the manufacturer datasheet before finalizing procurement specifications.
Select this component for designs requiring a 30 V NPN transistor with high current gain in an SOT-23 footprint. The AEC-Q101 qualification makes it suitable for automotive environments. Compare the 100 mA collector current limit against circuit requirements to ensure adequate headroom for the intended application load.
This part belongs to the BC849 series of small-signal NPN transistors produced by Micro Commercial Components. The series offers various gain grades, with the 'C' designation indicating the highest gain bin. The TP suffix typically denotes a tape-and-reel packaging format optimized for automated assembly processes.
BC849B-TP
Yes, the component holds AEC-Q101 qualification, making it suitable for automotive electronic systems.
The maximum power dissipation is rated at 225 mW.