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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：225 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC850BLT1G is an NPN silicon general-purpose transistor from the BC846ALT1 series, manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. The device operates within a junction temperature range of -55°C to +150°C and offers a DC current gain (hFE) minimum of 200 at IC = 2.0 mA and VCE = 5.0 V. Packaged in SOT-23 (TO-236), it provides a transition frequency (fT) of 100 MHz.
Feature Summary
- NPN epitaxial silicon planar design for general-purpose amplification
- High DC current gain with a minimum value of 200 under specified conditions
- Robust ESD protection exceeding 4000 V via Human Body Model
- Lead-free packaging compliant with RoHS directives
Applications
- General purpose amplifier circuits
- Switching applications requiring low saturation voltage
- Signal processing in consumer electronics
Procurement Notes
Verify the specific suffix 'BLT1' against official documentation to confirm package type and reel quantity. Ensure the component meets AEC-Q101 requirements if automotive qualification is necessary. Cross-reference datasheet revision dates to validate electrical characteristics before integration into final designs.
Selection Notes
Select this component when a 45 V breakdown voltage and 100 mA current capacity are required in a compact SOT-23 footprint. Consider the hFE B-grade binning for consistent gain performance. Evaluate thermal dissipation limits relative to the FR-5 board substrate specifications during circuit layout.
Part Context
Part of the BC846ALT1 series, which includes BC846, BC847, BC848, BC849, and BC850 variants. These devices share similar physical packages and thermal characteristics but differ primarily in their collector-emitter breakdown voltages, ranging from 30 V to 65 V across the series.
Replacement Considerations
BC846ALT1G, BC847ALT1G, BC848ALT1G, BC849ALT1G, BC850ALT1G
FAQ
What is the maximum collector-emitter voltage for the BC850BLT1?
The maximum collector-emitter voltage (VCEO) is 45 V.
Does the BC850BLT1 support automotive applications?
Yes, devices with the 'S' or 'NSV' prefix in this series are AEC-Q101 qualified and PPAP capable for automotive use.
What is the typical noise figure for this transistor?
The noise figure is typically 4.0 dB at IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, and BW = 200 Hz.
