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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT-323
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
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Overview
The BC850BW RFG is an NPN general-purpose bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a collector-emitter breakdown voltage of 45 V and a maximum continuous collector current of 100 mA. The device utilizes a SOT-323 surface-mount package with a maximum power dissipation of 200 mW. Key electrical characteristics include a transition frequency of 100 MHz and a minimum DC current gain (hFE) of 420 at 2 mA and 5 V. The saturation voltage is specified at 600 mV under standard test conditions, supporting reliable switching and amplification in compact electronic designs.
Feature Summary
- NPN epitaxial silicon planar design for general-purpose signal processing
- High DC current gain suitable for low-current amplification applications
- Compact SOT-323 surface-mount package optimized for space-constrained PCB layouts
Applications
- General-purpose amplifier circuits
- Low-voltage switching applications
- Signal conditioning stages
Procurement Notes
Verify the specific suffix 'RFG' against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure the component matches the required SOT-323 footprint and pinout configuration for your design. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a small-form-factor NPN transistor with moderate gain and low voltage ratings is required. Compare the 45 V breakdown voltage and 100 mA current limits against circuit requirements. Consider the 200 mW power dissipation limit for thermal management in dense assemblies.
Part Context
This part belongs to the BC849/BC850 series of NPN general-purpose transistors produced by Taiwan Semiconductor. It shares functional similarities with other industry-standard small-signal transistors but is distinguished by its specific gain binning and packaging variant. The series is widely used in consumer electronics and industrial control systems requiring reliable low-power switching.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative manufacturers such as Nexperia or Diotec based on pinout and electrical specifications.
