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The BC850CW,115 is an NPN general-purpose silicon transistor manufactured by Nexperia. It is housed in a SOT-323 (SC-70) surface-mount package with three leads. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. Key electrical characteristics include a DC current gain (hFE) ranging from 420 to 800 at 2 mA and 5 V, a transition frequency of 100 MHz, and a total power dissipation of 200 mW. The component operates within an ambient temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm the exact reel quantity and manufacturing origin. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement specifications.
Select this component when a small SMD footprint is required alongside high DC current gain. Ensure the design accommodates the 200 mW power dissipation limit and verify that the 45 V collector-emitter voltage rating meets the circuit requirements.
This part belongs to the BC850W series of NPN general-purpose transistors. It serves as the complement to the BC849W series. The BC850CW variant specifically denotes a tight binning range for DC current gain, distinguishing it from other gain grades within the same package family.
BC850CW,135
The marking code for the BC850CW is 2G.
The typical collector capacitance is 3 pF under conditions of IE = 0, VCB = 10 V, and f = 1 MHz.
The noise figure is typically 4 dB when measured at IC = 200 μA, VCE = 5 V, RS = 2 kΩ, and frequencies between 10 Hz and 15.7 kHz.