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The BC856ALT3G is a PNP silicon general-purpose transistor manufactured by onsemi. It operates with a collector-emitter voltage of -65 V and a continuous collector current of -100 mA dc. The device utilizes an SOT-23 (TO-236AB) plastic surface-mount package. Electrical characteristics include a minimum DC current gain of 125 at -10 mA, a transition frequency of 100 MHz, and a total power dissipation of 225 mW on an FR-5 board.
Verify the specific ordering suffix to confirm the reel quantity and tape specifications required for your assembly line. Confirm that the device marking matches the datasheet diagram for the selected variant. Ensure compliance with automotive site requirements if AEC-Q101 qualification is necessary for the application.
Select this component when a low-voltage PNP switch or amplifier is needed in a compact surface-mount form factor. Consider the thermal resistance and safe operating area curves for high-power pulse applications. Verify that the base-emitter saturation voltage meets the drive requirements of the preceding logic stage.
This part belongs to the BC856ALT1G series, which includes variants with different DC current gain ranges such as BC857 and BC858. All members share the same physical package and maximum ratings but are binned for specific hFE performance levels to suit various amplification needs.
Direct substitutes within the same family include BC856BLT3G and BC856ALT1G. Cross-manufacturer equivalents like the NXP BC856W require verification of pinout compatibility and electrical parameter margins.