BC856AQB-QZ

Overview

The BC856AQB-QZ is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-8015 (DFN1110D-3) leadless surface-mounted package with side-wettable flanks. The device supports a maximum collector current of 100 mA and features a collector-emitter voltage rating of 65 V. Key electrical specifications include a collector-base voltage of 80 V, an emitter-base voltage of 6 V, and a power dissipation capacity of 200 mW. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Features high power dissipation capability suitable for demanding thermal environments.
• Designed with a low profile height of 0.5 mm to accommodate space-restricted applications.
• Incorporates side-wettable flanks to facilitate Automatic Optical Inspection (AOI) of solder joints.

Applications

• General-purpose switching circuits
• Signal amplification tasks
• Space-constrained electronic designs

Procurement Notes

Verify the specific suffix QZ against official Nexperia documentation to confirm the DFN1110D-3 package configuration and automotive-grade qualification status. Ensure that the ordering information matches the required pinout and electrical characteristics defined in the datasheet before finalizing procurement orders.

Selection Notes

Select this component when a small footprint and reliable surface-mount performance are required for PNP switching or amplification. The DFN1110D-3 package offers a smaller area compared to conventional leaded packages while maintaining robust thermal handling capabilities for continuous operation.

Part Context

This part belongs to the BC856 series of general-purpose PNP transistors from Nexperia. It serves as a compact alternative to traditional SMD packages, providing enhanced reliability through its leadless design. The series is widely used in consumer electronics and industrial equipment requiring efficient signal processing.

Replacement Considerations

BC856BQB-QZ