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Product Detailed Parameters
- Description：TRANS 2PNP 65V 100MA SOT-363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：65V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：200mW
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The BC856AS-7 is a dual PNP surface mount small signal transistor manufactured by Diodes Incorporated. It features a maximum collector-emitter voltage (VCEO) of -65 V and a maximum collector-base voltage (VCBO) of -80 V. The device supports a continuous collector current (IC) of -100 mA with a peak current rating of -200 mA. Electrical characteristics include a DC current gain (hFE) ranging from 125 to 250 at IC = -2.0 mA, and a gain bandwidth product (fT) of 100 MHz. Power dissipation is rated at 200 mW with a thermal resistance (RθJA) of 625 °C/W. The component operates within a temperature range of -65°C to +150°C and is housed in an SOT363 package.
Feature Summary
- Dual PNP configuration integrated into a single SOT363 surface-mount package for space-efficient circuit design.
- High collector current capability of 100 mA suitable for general-purpose switching and audio frequency amplifier applications.
- Fully RoHS compliant and halogen-free construction utilizing a green molded plastic compound.
Applications
- General-purpose switching circuits
- Audio frequency (AF) amplification stages
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard reel quantity of 3,000 units as documented in the manufacturer's datasheet. Confirm that the required marking code 'KPS' aligns with project labeling standards. Ensure compliance with J-STD-020 moisture sensitivity level 1 requirements during storage and handling procedures prior to assembly.
Selection Notes
Select this component when a compact dual PNP solution is required for low-voltage applications up to 65 V. The SOT363 package offers a smaller footprint compared to discrete single transistors. Verify that the required hFE range of 125 to 250 meets the specific biasing needs of the target circuit design.
Part Context
This part belongs to the BC856AS series of dual PNP transistors produced by Diodes Incorporated. It serves as the complementary counterpart to the NPN BC846AS type. The device is distinct from automotive-grade variants such as the BC856ASQ, which requires separate qualification documentation.
Replacement Considerations
The BC856AS-7 may be replaced by other dual PNP transistors in the SOT363 package, provided they meet or exceed the -65 V VCEO and -100 mA IC specifications. Verify pinout compatibility and thermal resistance values before substitution.
FAQ
What is the maximum power dissipation for the BC856AS-7?
The maximum power dissipation is 200 mW at an ambient temperature of +25°C.
Is the BC856AS-7 suitable for automotive applications?
Standard BC856AS-7 parts are not explicitly qualified for automotive use. Automotive-compliant versions are available under the separate BC856ASQ designation.
What is the typical DC current gain (hFE) range?
The DC current gain ranges from a minimum of 125 to a maximum of 250 when tested at VCE = -5.0 V and IC = -2.0 mA.
