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The BC856AW-7-F is a PNP small signal transistor manufactured by Diodes Incorporated, housed in an SOT323 surface-mount package. It features a collector-emitter voltage of -65V and a continuous collector current of -100mA. The device supports a maximum power dissipation of 200mW at +25°C ambient temperature. Electrical characteristics include a DC current gain ranging from 125 to 800 depending on the grouping, a transition frequency up to 200MHz, and low saturation voltages for efficient switching.
Verify that the component matches the specific BC856AW-7-F designation to ensure correct voltage rating and pinout configuration. Confirm compliance requirements such as lead-free status and halogen-free specifications against project constraints. Check datasheet revision history for any updates to electrical parameters or mechanical dimensions before finalizing procurement documentation.
Select this component when a PNP transistor with a -65V collector-emitter breakdown voltage is required in a compact SOT323 footprint. Consider the available DC current gain groups (A, B, C) based on the specific amplification needs of the circuit design. Ensure thermal management strategies account for the 200mW power dissipation limit under steady-state operating conditions.
This part belongs to the BC856AW–BC858CW series of PNP small signal transistors. It serves as the complementary counterpart to the NPN BC846AW–BC848CW series. The 'AW' suffix indicates the specific collector-emitter voltage rating within the family, distinguishing it from variants with lower voltage ratings like the BW or CW series.
Direct substitutes include other BC856A variants from different manufacturers in the SOT323 package, provided they meet the -65V VCEO and -100mA IC specifications. Verify pin compatibility and thermal resistance values when cross-referencing with alternative sources.