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The Taiwan Semiconductor BC856B is a PNP general-purpose bipolar junction transistor (BJT) housed in a SOT-23 surface-mount plastic package. It features a maximum collector-emitter voltage of 65V and a continuous collector current of 100mA. The device offers a DC current gain range of 220 to 475, with a transition frequency of 100MHz. Power dissipation is rated at 200mW, and it operates within a temperature range of -55°C to +150°C.
Verify the manufacturer marking on the component body to confirm Taiwan Semiconductor origin, as this part number is widely produced by multiple vendors including Nexperia and Diodes Incorporated. Ensure the specific suffix matches the required gain binning and packaging format. Cross-reference the datasheet revision date to confirm compliance with current environmental standards before finalizing procurement specifications.
Select this component when a PNP transistor with 65V breakdown and 100mA current capacity is required in a compact SOT-23 footprint. It serves as the complement to NPN devices like the BC846 series. Consider the hFE binning requirements for your specific gain needs and ensure thermal management supports the 200mW power dissipation limit in your enclosure design.
This device belongs to the standard BC85x family of small-signal transistors. It is designed for low-power analog and digital applications where space constraints necessitate surface-mount technology. The BC856B specifically targets applications requiring moderate voltage handling and reliable amplification characteristics in consumer electronics and industrial control modules.
Direct pin-compatible substitutes include BC856B from Nexperia, Diodes Incorporated, and onsemi. Verify that alternative sources meet the same electrical specifications and package dimensions.