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The BC856BDW1T1 is a dual general-purpose PNP transistor housed in an SOT-363 (SC-88) surface-mount package. It features two independent PNP transistors within a single compact component designed for low-power applications. Key electrical specifications include a collector-emitter voltage of -65 V, a continuous collector current of -100 mA, and a DC current gain ranging from 220 to 475 at specific test conditions. The device operates with a junction temperature range of -55°C to +150°C and offers a current-gain bandwidth product of 100 MHz.
Verify the ordering suffix 'DW1T1' against the manufacturer's official documentation to confirm the specific tape and reel quantity and marking code. Ensure the procurement matches the exact part number BC856BDW1T1/D to guarantee correct pinout and electrical characteristics for the SOT-363 package.
Select this component when a dual PNP transistor solution is required in a small surface-mount footprint. Consider the -65 V collector-emitter voltage and -100 mA current limits during circuit design. Verify that the SOT-363 package dimensions fit the available PCB space and that the thermal resistance characteristics are suitable for the intended operating environment.
This component belongs to the BC856/BC857/BC858 series of dual general-purpose transistors manufactured by onsemi. These devices share similar packaging and functional architectures but differ in voltage ratings and gain bands. The BC856 variant specifically provides higher voltage tolerance compared to the BC857 and BC858 counterparts.
Check for direct substitutes such as BC856BDW1T1G or BC856BDW1T3 from the same manufacturer family. Verify pin compatibility and electrical parameters before replacing with components from other manufacturers.