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The BC856BDW1T1G is a dual PNP bipolar junction transistor (BJT) array housed in an SOT-363 surface-mount package. It features a maximum continuous collector current of -100 mA and a collector-emitter breakdown voltage (V(BR)CEO) of -65 V at IC = -10 mA. The device has a collector-base breakdown voltage (V(BR)CBO) of -80 V and an emitter-base breakdown voltage (V(BR)EBO) of -5.0 V. DC current gain (hFE) ranges from 220 to 475 at IC = -10 mA, VCE = -5.0 V. Total power dissipation is 380 mW at 25°C ambient temperature on an FR-5 board. The transition frequency (fT) is 100 MHz.
Verify the ordering suffix 'DW1T1G' corresponds to the SOT-363 package with a shipping quantity of 3,000 units per tape and reel. Confirm that the 'B' designation matches the required hFE range of 220 to 475. Ensure the 'S' prefix is not required if automotive qualification under AEC-Q101 is necessary, as this indicates a different variant.
Select this component when a dual PNP configuration is needed in a compact SOT-363 footprint. The -65 V collector-emitter voltage rating suits standard low-voltage logic and analog interfaces. Verify that the 380 mW total power dissipation meets thermal constraints for the specific PCB layout and ambient operating conditions.
This part belongs to the BC856BDW1T1G series, which includes variants like BC857BDW1T1G and BC858CDW1T1G differentiated by voltage ratings. The BC856 series specifically provides the highest voltage tolerance within this family. The device is manufactured by onsemi and utilizes the SC-88 mechanical outline.
Publicly confirmed substitutes include the SBC856BDW1T1G for automotive-grade requirements and the BC856BDW1T3G for higher volume tape and reel packaging. Other series members like BC857BDW1T1G offer lower voltage ratings (-45 V) and should only be used if circuit margins allow.