BC856BDW1T3G

Overview

The onsemi BC856BDW1T3G is a dual general-purpose PNP transistor housed in the SOT-363 (SC-88) surface-mount package. It contains two independent PNP transistors designed for low-power applications. The device features a collector-emitter voltage of -65 V, a continuous collector current of -100 mA, and a total power dissipation of 250 mW per device at 25°C. It operates within a junction temperature range of -55°C to +150°C. The component is lead-free, halogen-free, and RoHS compliant.

Feature Summary

• Dual PNP configuration in a compact SOT-363 package
• Designed for general-purpose amplifier applications
• Lead-free and halogen-free construction

Applications

• General purpose amplifier circuits
• Low power surface mount applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and shipping format. Confirm that the device marking matches the datasheet specifications for the BC856B series. Ensure compliance with environmental directives such as RoHS if required by the application. Check for any discontinuation notices or recommended new design alternatives from the manufacturer before finalizing procurement.

Selection Notes

Select this component when a dual PNP transistor solution is required in a small surface-mount footprint. Consider the -65 V collector-emitter voltage rating and -100 mA continuous current capability for circuit design limits. Evaluate the thermal resistance and power dissipation characteristics relative to the expected operating conditions and ambient temperature constraints.

Part Context

This part belongs to the BC856BDW1T1G series, which includes other variants like BC857BDW1T1G and BC858CDW1T1G. These devices share the same SOT-363 package and general structure but differ in breakdown voltage and current gain specifications. The BC856 variant specifically offers the highest voltage rating among the common BC85x series members.

Replacement Considerations

BC856BDW1T1G