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The BC856BHZGT116 is an automotive-grade PNP bipolar junction transistor manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in a surface-mount SOT-23-3 package. The device features a collector-emitter voltage of -45 V, a continuous collector current of -0.1 A, and power dissipation of 200 mW. It meets AEC-Q101 standards for automotive applications. The DC current gain (hFE) ranges from 210 to 480 at specified test conditions.
Verify the specific suffix GT116 against official ROHM documentation to confirm reel packaging and tape specifications. Ensure the component matches the required hFE binning range for your circuit design. Cross-reference the datasheet revision date to confirm compliance with current RoHS directives and material declarations before finalizing procurement orders.
Select this component when automotive qualification is mandatory for PNP small-signal applications. It serves as the complementary counterpart to the BC847B series. Consider the -45V rating and 200mW dissipation limits relative to your thermal management strategy. Verify that the SOT-23 footprint aligns with your board layout constraints.
This part belongs to ROHM's HZG series of automotive-grade bipolar transistors. These devices are engineered for high reliability in harsh environments. The series includes complementary NPN and PNP variants designed to work together in push-pull or differential configurations within automotive control modules and sensor interfaces.
Public confirmed substitute part numbers: BC856BHZG.