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The BC856BLT3G is a PNP silicon general-purpose transistor manufactured by onsemi. It operates within a collector-emitter voltage of -65 V and supports a continuous collector current of -100 mA. The device features a DC current gain (hFE) ranging from 220 to 475 at an IC of -2.0 mA and VCE of -5.0 V. It utilizes the SOT-23 surface-mount package with a total power dissipation of 225 mW on an FR-5 board. The component is qualified under AEC-Q101 standards for automotive applications.
Verify the specific ordering suffix against official documentation to confirm package type, reel quantity, and manufacturing site requirements. Ensure compliance with RoHS directives and confirm that the selected variant meets the necessary PPAP capabilities if utilized in automotive supply chains.
Select this component when a high-gain PNP transistor is required for low-current signal processing or switching tasks. The specified hFE range suits applications demanding consistent amplification characteristics without requiring tight binning constraints.
This part belongs to the BC856ALT1G series of general-purpose PNP transistors. It serves as a complement to NPN devices like the BC846B and is designed for use in standard small-signal applications where moderate voltage handling and reliable switching performance are essential.
Compatible substitutes include BC856BLT1G and NSVBC856BLT3G. Verify pinout compatibility and electrical parameter alignment before implementation.