BC856BS/DG/B2,115

BC856BS/DG/B2,115

  • Description:TRANS 2PNP 65V 100MA 6-TSSOP
  • Series:-

SKU:ba65d8357f1f Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2PNP 65V 100MA 6-TSSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:300mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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BC856BS/DG/B2,115

Overview

The BC856BS/DG/B2,115 is a dual PNP bipolar junction transistor array manufactured by Nexperia USA Inc. It features two independent PNP transistors housed in a compact 6-TSSOP (SC-88/SOT-363) surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 65 V. Key electrical characteristics include a DC current gain (hFE) of at least 110 at 2 mA and 5 V, a transition frequency of 100 MHz, and a maximum power dissipation of 300 mW. The component operates within a junction temperature range up to 150°C and exhibits a saturation voltage of 300 mV under specified conditions.

Feature Summary

  • Dual PNP configuration for space-efficient circuit design
  • High current gain suitable for general-purpose amplification
  • Compact 6-pin TSSOP footprint for automated assembly

Applications

  • General-purpose switching circuits
  • Signal amplification stages
  • Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix code against the manufacturer's official datasheet to confirm exact hFE binning and packaging specifications. Ensure compatibility with standard SMT reflow profiles and confirm RoHS compliance status for the target market regulations before finalizing procurement orders.

Selection Notes

Select this component when a dual PNP solution is required in a small outline package. Compare the 100 mA current rating and 65 V voltage limit against circuit requirements. Consider the 300 mW power dissipation limit and thermal management needs for the chosen PCB layout.

Part Context

This part belongs to the BC856 series of general-purpose PNP transistors from Nexperia. It serves as the dual-array variant of single PNP devices like the BC856B, offering integrated functionality in a six-terminal surface-mount package. It complements NPN arrays such as the BCM846BSX within the same product family.

Replacement Considerations

Direct pin-to-pin replacements may include other BC856S variants from different manufacturers or alternative dual PNP arrays in SOT-363 packages. Verify electrical parameters and package dimensions before substitution.

BC856BS/DG/B2,115BC856BS/DG/B2,115

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