SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC856BS/DG/B2,115 is a dual PNP bipolar junction transistor array manufactured by Nexperia USA Inc. It features two independent PNP transistors housed in a compact 6-TSSOP (SC-88/SOT-363) surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 65 V. Key electrical characteristics include a DC current gain (hFE) of at least 110 at 2 mA and 5 V, a transition frequency of 100 MHz, and a maximum power dissipation of 300 mW. The component operates within a junction temperature range up to 150°C and exhibits a saturation voltage of 300 mV under specified conditions.
Verify the specific suffix code against the manufacturer's official datasheet to confirm exact hFE binning and packaging specifications. Ensure compatibility with standard SMT reflow profiles and confirm RoHS compliance status for the target market regulations before finalizing procurement orders.
Select this component when a dual PNP solution is required in a small outline package. Compare the 100 mA current rating and 65 V voltage limit against circuit requirements. Consider the 300 mW power dissipation limit and thermal management needs for the chosen PCB layout.
This part belongs to the BC856 series of general-purpose PNP transistors from Nexperia. It serves as the dual-array variant of single PNP devices like the BC856B, offering integrated functionality in a six-terminal surface-mount package. It complements NPN arrays such as the BCM846BSX within the same product family.
Direct pin-to-pin replacements may include other BC856S variants from different manufacturers or alternative dual PNP arrays in SOT-363 packages. Verify electrical parameters and package dimensions before substitution.