BC856BS/DG/B3X

BC856BS/DG/B3X

  • Description:TRANS 2PNP 65V 100MA 6-TSSOP
  • Series:-

SKU:a8dad6d88f15 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2PNP 65V 100MA 6-TSSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:300mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

BC856BS/DG/B3X

Overview

The BC856BS/DG/B3X is a dual PNP bipolar junction transistor (BJT) array manufactured by Nexperia. It integrates two independent PNP transistors within a compact SOT-363 (SC-88, TSSOP-6) surface-mount package. The device supports a maximum collector current of 100 mA and offers high voltage ratings, including a collector-emitter breakdown voltage (VCEO) of 65 V and a collector-base voltage (VCBO) of 80 V. The emitter-base reverse voltage (VEBO) is rated at 5 V. Electrical performance includes a transition frequency (fT) of 100 MHz and a DC current gain (hFE) minimum of 110 at 2 mA and 5 V. Power dissipation is limited to 300 mW, with an operating temperature range spanning from -65 °C to +150 °C.

Feature Summary

  • Dual PNP configuration in a single ultra-small surface-mount package for space-constrained designs
  • High voltage tolerance with 65 V collector-emitter and 80 V collector-base ratings
  • Optimized for general-purpose switching and amplification applications

Applications

  • General-purpose signal switching circuits
  • Amplifier stages requiring dual complementary or matched PNP pairs
  • Logic interface and level shifting applications

Procurement Notes

Verify the specific suffix (DG/B3X) against official Nexperia documentation to confirm exact binning, tape-and-reel specifications, and manufacturing origin. Ensure compatibility with RoHS 3 and REACH regulations as stated in the primary datasheet. Confirm that the ordering part number matches the required gain group and packaging format for your production line.

Selection Notes

Select this component when a dual PNP solution is required in a footprint smaller than discrete packages. Compare the 300 mW power dissipation limit against thermal constraints in dense PCB layouts. Verify that the 100 mA continuous current rating meets load requirements. Consider the SOT-363 thermal resistance characteristics if multiple devices are active simultaneously.

Part Context

This part belongs to the BC856S family of dual PNP transistors, which serves as the dual counterpart to the BC846S NPN array. It shares the same SOT-363 package platform as other Nexperia small-signal arrays, providing designers with flexible options for integrating multiple transistors without increasing board area. The 'B3X' suffix typically denotes specific packaging or lot traceability details defined by Nexperia.

Replacement Considerations

Direct functional substitutes include the BC856S,115 and BC856S,125 from Nexperia, which share identical electrical characteristics and pinout. Other manufacturers may offer equivalents in the SC-88 package, but verification of hFE bins and VCE(sat) limits is required to ensure circuit compatibility.

BC856BS/DG/B3XBC856BS/DG/B3X

Click on the inquiry