SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC856BW-7-F is a PNP small signal transistor manufactured by Diodes Incorporated, housed in an SOT323 surface-mount package. It features a collector-emitter voltage of -65 V and a continuous collector current of -100 mA. The device offers a DC current gain (hFE) range of 220 to 475 for Group B classification at -2.0 mA. Transition frequency reaches 200 MHz, with power dissipation rated at 200 mW. Operating temperature spans from -55°C to +150°C.
Verify the specific ordering suffix matches the required reel size and quantity. Confirm that the standard marking code K3B aligns with assembly requirements. Ensure compliance with environmental directives such as RoHS 2 and RoHS 3. Check moisture sensitivity level ratings against storage conditions. Validate that the component meets the intended application's thermal and electrical constraints.
Select this component when a PNP transistor with a -65 V collector-emitter voltage rating is required. Consider the Group B hFE range if specific gain characteristics are necessary for the circuit design. Evaluate the SOT323 package dimensions for space-constrained PCB layouts. Assess the transition frequency performance for high-speed switching or amplification needs.
This part belongs to the BC856AW through BC858CW series of PNP small signal transistors. The series shares the same SOT323 mechanical footprint but varies in breakdown voltage ratings. The BC856 variant specifically provides higher voltage tolerance compared to the BC857 and BC858 counterparts within the same family.
Complementary NPN types available include the BC846AW through BC848CW series. Other variants within the same package family include BC856AW-7-F and BC856BW-13-F.