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The BC856BW/DG/B3X is a PNP general-purpose bipolar junction transistor manufactured by Nexperia USA Inc. It operates with a maximum collector-emitter voltage of 65 V and a continuous collector current of 100 mA. The device features a DC current gain (hFE) ranging from 220 to 475 at 2 mA and 5 V. It is housed in an SOT-323 surface-mount package, measuring 2.20 x 1.35 mm with a height of 1.10 mm. The transition frequency is 100 MHz, and power dissipation is rated at 200 mW.
Verify the specific suffix against official Nexperia documentation to confirm exact binning or marking codes. Ensure the ordering part number matches the required gain range and package variant. Confirm RoHS compliance status through the manufacturer's latest datasheet before procurement.
Select this component for applications requiring low voltage operation and high gain within a compact footprint. The SOT-323 package suits automated assembly processes. Verify thermal management requirements as the power dissipation is limited to 200 mW.
This part belongs to the BC856 series of PNP transistors. It serves as the complement to the BC846 NPN series. The family includes variants with different gain ranges and packaging options for diverse design needs.
BC856B,115
The maximum collector-emitter voltage (VCEO) is 65 V.
The device is available in the SOT-323 (SC-70) surface-mount package.
The DC current gain (hFE) typically ranges from 220 to 475 at IC=2mA and VCE=5V.