BC856BW/DG/B4X

BC856BW/DG/B4X

  • Description:TRANS PNP SOT323
  • Series:-

SKU:e36e0a1f3e06 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP SOT323
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
  • Power - Max:-
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323
  • Grade:-
  • Qualification:-

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BC856BW/DG/B4X

Overview

The BC856BW/DG/B4X is a PNP general-purpose bipolar junction transistor manufactured by Nexperia USA Inc. It operates with a collector-emitter breakdown voltage of 65 V and a maximum continuous collector current of 100 mA. The device features a transition frequency of 100 MHz and a power dissipation rating of 200 mW. It is housed in an SOT-323 (SC-70) surface-mount package, measuring 2.20 x 1.35 mm with a height of 1.10 mm. The component supports a maximum operating temperature of +150°C and includes gain banding options.

Feature Summary

  • PNP general-purpose switching and amplification
  • Ultra-small SOT-323 surface-mount plastic package
  • High DC current gain selection

Applications

  • General-purpose switching
  • Amplifier circuits
  • Space-restricted applications

Procurement Notes

Verify the specific suffix against official Nexperia documentation to confirm exact gain binning and tape-and-reel specifications. Ensure the ordering code matches the required hFE range for your design. Confirm RoHS compliance status and moisture sensitivity level prior to procurement to guarantee supply chain integrity and assembly compatibility.

Selection Notes

Select this component for designs requiring low-voltage PNP switching within compact footprints. The SOT-323 package offers a smaller footprint compared to standard SOT-23 variants. Verify that the 65V collector-emitter voltage and 100mA current limits exceed your circuit's peak requirements. Consider the specific gain banding indicated by the suffix to ensure proper biasing stability.

Part Context

This part belongs to the BC856 series of PNP general-purpose transistors from Nexperia. It serves as the PNP complement to the BC846 NPN series. The device is designed for low-current, low-voltage applications where space constraints are critical. It is widely used in consumer electronics and portable devices due to its small form factor and reliable performance characteristics.

Replacement Considerations

BC856B,115

FAQ

What is the maximum collector-emitter voltage for this transistor?

The maximum collector-emitter breakdown voltage (Vceo) is 65 V.

Which package type does the BC856BW use?

It utilizes the SOT-323 (also known as SC-70) surface-mount plastic package.

What is the maximum power dissipation rating?

The maximum power dissipation is 200 mW.

BC856BW/DG/B4XBC856BW/DG/B4X

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