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The BC856BW/DG/B4X is a PNP general-purpose bipolar junction transistor manufactured by Nexperia USA Inc. It operates with a collector-emitter breakdown voltage of 65 V and a maximum continuous collector current of 100 mA. The device features a transition frequency of 100 MHz and a power dissipation rating of 200 mW. It is housed in an SOT-323 (SC-70) surface-mount package, measuring 2.20 x 1.35 mm with a height of 1.10 mm. The component supports a maximum operating temperature of +150°C and includes gain banding options.
Verify the specific suffix against official Nexperia documentation to confirm exact gain binning and tape-and-reel specifications. Ensure the ordering code matches the required hFE range for your design. Confirm RoHS compliance status and moisture sensitivity level prior to procurement to guarantee supply chain integrity and assembly compatibility.
Select this component for designs requiring low-voltage PNP switching within compact footprints. The SOT-323 package offers a smaller footprint compared to standard SOT-23 variants. Verify that the 65V collector-emitter voltage and 100mA current limits exceed your circuit's peak requirements. Consider the specific gain banding indicated by the suffix to ensure proper biasing stability.
This part belongs to the BC856 series of PNP general-purpose transistors from Nexperia. It serves as the PNP complement to the BC846 NPN series. The device is designed for low-current, low-voltage applications where space constraints are critical. It is widely used in consumer electronics and portable devices due to its small form factor and reliable performance characteristics.
BC856B,115
The maximum collector-emitter breakdown voltage (Vceo) is 65 V.
It utilizes the SOT-323 (also known as SC-70) surface-mount plastic package.
The maximum power dissipation is 200 mW.