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The BC856BWQ is a PNP small signal transistor manufactured by Diodes Incorporated in an SOT323 package. It features a collector-emitter voltage of -65V and a continuous collector current of -100mA. The device has a transition frequency of 100MHz and a DC current gain (hFE) ranging from 220 to 475 at VCE = -5.0V and IC = -2.0mA. Power dissipation is rated at 200mW with a thermal resistance of 625 °C/W. Operating temperature ranges from -65°C to +150°C.
Verify the specific ordering suffix '-7' corresponds to the 3000-piece reel size and 'K3B' marking code as documented in the Diodes Incorporated datasheet DS43187. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive use. Ensure compliance with RoHS 3 and REACH regulations based on the manufacturer's green product definitions.
Select this component when an automotive-grade PNP transistor is required in a compact SOT323 surface-mount package. It serves as a complementary match to the BC846BWQ NPN type. Consider its high DC current gain range and low saturation voltage characteristics for efficient switching and amplification tasks within specified voltage and current limits.
This part belongs to the BC856 series of general-purpose PNP transistors designed for small-signal applications. Manufactured by Diodes Incorporated, it utilizes a molded plastic case with matte tin plated leads. The device is specifically engineered to meet stringent automotive industry standards while maintaining standard electrical performance metrics for consumer electronics.
BC846BWQ is the complementary NPN type available from the same manufacturer.