BC856BWT1G

Overview

The BC856BWT1G is a single PNP bipolar junction transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SC-70-3 (SOT-323) surface-mount package. The device supports a maximum DC collector current of 100 mA and operates with a collector-emitter voltage of 65 V and a collector-base voltage of 80 V. Key electrical characteristics include a minimum DC current gain of 220, a transition frequency of 100 MHz, and a power dissipation rating of 150 mW. It functions within a temperature range of -55°C to +150°C.

Feature Summary

• Single PNP configuration for compact circuit integration
• High DC current gain for efficient signal amplification
• Wide operating temperature range for thermal stability

Applications

• General-purpose switching applications
• Small-signal amplification circuits
• Driver stages for low-power loads

Procurement Notes

Verify the component authenticity against official onsemi documentation. Confirm the specific suffix matches the required gain binning and packaging format. Ensure compliance with relevant environmental standards before integration into final assemblies.

Selection Notes

Select this component for designs requiring a small-footprint PNP transistor with moderate voltage ratings. Consider the SC-70-3 package constraints for PCB layout. Evaluate the thermal management requirements relative to the 150 mW power dissipation limit under expected load conditions.

Part Context

This part belongs to the BC856 series of general-purpose transistors. It serves as a complementary or alternative device to other small-signal BJTs in the same family. The SC-70-3 package provides a space-efficient solution for modern electronic devices requiring high-density mounting.

Replacement Considerations

Direct substitutes include SBC856BWT1G from onsemi. Other compatible options may exist from different manufacturers, but verification of pinout and electrical parameters is essential.