ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PNP 65V 0.1A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：65 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：310 mW
- Frequency - Transition：150MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
Download product information
Overview
The BC856CMTF is a PNP epitaxial silicon transistor manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a maximum collector-emitter voltage of -30 V and a continuous DC collector current rating of -100 mA. The device provides a DC current gain (hFE) range of 420 to 800 at a collector current of -2 mA. Key electrical characteristics include a collector-base voltage of -30 V, an emitter-base voltage of -5 V, and a total power dissipation of 310 mW at 25°C ambient temperature.
Feature Summary
- Designed for switching and amplifier applications
- Suitable for automatic insertion in thick and thin-film circuits
Applications
- Switching circuits
- Amplifier applications
- Thick and thin-film circuit integration
Procurement Notes
Verify the specific hFE classification suffix 'C' corresponds to the required gain range of 420 to 800. Confirm the 'M' suffix indicates the matte finish package type and 'TF' denotes tape and reel packaging with a quantity of 3000 units per reel. Ensure compatibility with the SOT-23 footprint dimensions provided in the mechanical data section of the datasheet.
Selection Notes
Select this component when a high-gain PNP transistor is required for general-purpose switching or amplification within the specified voltage limits. The BC856C variant offers a higher minimum current gain compared to A or B classifications. Consider the thermal constraints of the SOT-23 package and the 310 mW power dissipation limit during design validation.
Part Context
This part belongs to the BC856-BC860 family of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by onsemi following their integration. The series includes complementary devices such as the BC846 through BC850 NPN counterparts. The BC856C specifically targets applications requiring higher DC current gain performance within the standard small-signal transistor form factor.
Replacement Considerations
Compatible substitutes within the same family include BC856AMTF and BC856BMTF, which share identical pinouts and absolute maximum ratings but differ in hFE gain classification ranges.
