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The BC856DS-TP is a dual PNP bipolar junction transistor manufactured by Micro Commercial Components. It is housed in an SOT-23-6L surface-mount package and utilizes silicon technology. The device supports a maximum DC collector current of 100 mA with a power dissipation rating of 300 mW. Key voltage ratings include a collector-emitter voltage (VCEO) of 65 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 5 V. The component features a gain-bandwidth product (fT) of 100 MHz and operates within a temperature range of -55°C to +150°C.
Verify the specific datasheet version and RoHS compliance status directly with the manufacturer or authorized distributor before integration. Confirm that the SOT-23-6L pinout matches the design schematic, as packaging variations can exist. Ensure the ordering suffix corresponds to the required tape-and-reel quantity specifications for production compatibility.
Select this component when a dual PNP configuration is required in a small outline package. Compare the 65 V VCEO and 100 mA Ic limits against circuit requirements. Consider the 300 mW power dissipation limit for thermal management. Verify that the 100 MHz transition frequency meets the signal bandwidth needs of the application.
This part belongs to the BC856DS series of dual PNP transistors produced by Micro Commercial Components. It serves as a compact alternative to discrete single transistors, reducing board space. The device is categorized under bipolar junction transistors and is designed for surface-mount assembly technologies.
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official cross-reference lists from MCC or verify pin-compatible alternatives based on identical electrical parameters such as VCEO, Ic, and package type.