BC856S

Overview

The BC856S is a surface-mount general-purpose PNP transistor array manufactured by Diotec Semiconductor. It integrates two independent PNP transistors within a single SOT-363 package, designed for signal processing, switching, and amplification applications. The device features a collector-emitter voltage (VCEO) of -65 V and a maximum DC collector current (IC) of -100 mA per transistor. Power dissipation is rated at 250 mW when mounted on a PCB with 3 mm² copper pads, or 200 mW with minimum pad layouts. The unit operates across a junction temperature range of -55°C to +150°C and exhibits a DC current gain (hFE) between 220 and 475.

Feature Summary

• Integrates two independent PNP transistors in a compact SOT-363 package
• Suitable for general-purpose signal processing, switching, and amplification
• Compliant with RoHS directives without exemption and REACH regulations

Applications

• Signal processing circuits
• Electronic switching applications
• Amplification stages

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Standard versions are designated for commercial and industrial grade usage. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm that the selected variant aligns with the required reliability standards for the intended application environment.

Selection Notes

Select the BC856S based on the required voltage rating of -65 V and current capacity of -100 mA. Ensure the thermal design accommodates the specified power dissipation limits of 200 mW or 250 mW depending on the PCB copper pad area. Verify that the operating temperature range of -55°C to +150°C meets the environmental requirements of the target system.

Part Context

The BC856S belongs to the BC85x series of SMD general-purpose PNP transistors produced by Diotec Semiconductor. It shares the same physical package and pinout configuration as the BC857S, which differs primarily in its lower collector-emitter voltage rating of -45 V. Both devices utilize the SOT-363 footprint to provide dual transistor functionality in a space-constrained surface-mount form factor.

Replacement Considerations

The BC857S serves as a direct functional substitute within the same package family, provided the circuit design can accommodate the lower -45 V collector-emitter voltage rating. Verify that the reduced voltage margin does not compromise the operational safety of the application.