BC856S,125

Overview

The BC856S,125 is a PNP/PNP general-purpose transistor pair manufactured by Nexperia USA Inc. It is housed in a TSSOP6 (SOT363-3) surface-mounted package. Key electrical parameters include a collector-emitter voltage of -65 V and a maximum collector current of -100 mA per transistor. The device features closely matched current gain with a minimum hFE of 110 at -2 mA. Limiting values specify a collector-base voltage of -80 V and an emitter-base voltage of -5 V. Total power dissipation reaches 300 mW for the device at 25 °C ambient temperature. The transition frequency is rated at 100 MHz.

Feature Summary

• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain between transistors
• No mutual interference between the internal transistors

Applications

• General-purpose switching
• Amplification circuits

Procurement Notes

Verify the specific ordering suffix to confirm packaging details such as reel or cut tape configuration. Confirm RoHS compliance status through official Nexperia documentation before finalizing procurement plans. Ensure the component meets all absolute maximum rating requirements for the intended operating environment.

Selection Notes

Select this component for designs requiring dual PNP transistors in a compact SOT363-3 footprint. The closely matched current gain makes it suitable for differential amplifier applications. Verify thermal resistance characteristics against the expected power dissipation levels in the target PCB layout.

Part Context

This part belongs to the BC856 series of general-purpose PNP transistors. It serves as a dual-transistor alternative to single discrete components, reducing board space and component count. The SOT363-3 package provides a small form factor suitable for dense surface-mount assemblies.

Replacement Considerations

BC856S,115