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The BC856UE6327HTSA1 is a dual PNP silicon bipolar junction transistor (BJT) array manufactured by Infineon Technologies. It is housed in an SC-74-6 surface-mount package, also identified as SOT-363. The device features a maximum collector-emitter voltage (VCEO) of 65 V and a collector-base voltage (VCBO) of 80 V. It supports a continuous DC collector current of 100 mA with a peak collector current of 200 mA. The component has a power dissipation rating of 250 mW and a transition frequency (fT) of 250 MHz. It operates within a temperature range of -65°C to +150°C.
Verify the specific ordering suffix E6327HTSA1 against official Infineon documentation to confirm the exact tape-and-reel quantity and packaging specifications. Ensure compatibility with standard SC-74-6 footprint dimensions during PCB layout verification. Confirm RoHS compliance status through the manufacturer's material declaration before integration.
Select this component when a dual PNP BJT array is required in an SC-74-6 package. The 65 V VCEO rating suits low-voltage logic interfaces. The 250 MHz fT provides adequate speed for general audio and RF switching tasks. Compare thermal performance against the 250 mW dissipation limit in high-density layouts.
This part belongs to the BC856 series of dual PNP transistors from Infineon. It shares functional characteristics with other members like the BC856S but differs in packaging and specific electrical tolerances defined by the datasheet. The series is designed for cost-effective mass production in portable devices.
Direct substitutes include the BC856SE6327HTSA1 if pinout and electrical parameters match exactly. Verify that alternative dual PNP arrays in SC-74-6 packages maintain identical VCEO and hFE ranges to ensure circuit stability without redesign.