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The BC856W-QX is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It is housed in the SOT323 (SC-70) surface-mount plastic package. The device supports a maximum collector current of 100 mA and features a collector-emitter voltage rating of 65 V. Key electrical parameters include a collector-base voltage of 80 V, an emitter-base voltage of 5 V, and a DC current gain (hFE) minimum of 125 at 2 mA and 5 V. Power dissipation is rated at 200 mW with a transition frequency of 100 MHz. Operating temperatures range from -65 °C to +150 °C.
Verify that the ordering suffix matches the specific packaging configuration required for your assembly line, as variations exist between reel and cut tape formats. Confirm the component meets AEC-Q101 automotive qualification requirements if intended for vehicle integration. Ensure the selected gain group aligns with circuit design specifications before finalizing procurement orders.
Select this component when a PNP transistor with automotive-grade reliability is required in a small form factor. The BC856W-QX serves as the complement to the BC846W-Q NPN series. Consider the 65 V collector-emitter voltage and 100 mA current limits against load requirements. Verify thermal management capabilities given the 200 mW power dissipation rating in the SOT323 package.
The BC856W-QX belongs to the BC856xW-Q family of PNP transistors within Nexperia's portfolio. This family includes variants such as BC856AW-Q and BC856BW-Q, which offer different gain selections. All members share the same SOT323 package and automotive qualification status, providing designers with flexibility in current gain while maintaining consistent physical dimensions and reliability standards.
The BC856W-QX is the direct PNP complement to the BC846W-Q NPN transistor. Designers may substitute other BC856xW-Q variants like BC856AW-Q or BC856BW-Q if different gain characteristics are needed, provided the package and voltage ratings remain compatible.