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The BC857AQBAZ is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It operates with a maximum collector-emitter voltage of 45 V and supports a continuous collector current of 100 mA. The device utilizes silicon technology and is housed in a DFN-1110D-3 (SOT8015) leadless surface-mount package. Key electrical characteristics include a collector-base voltage of 45 V, a collector-emitter saturation voltage of 650 mV, and a maximum power dissipation of 200 mW. It features a transition frequency of 100 MHz and a DC current gain of at least 125 under specified conditions.
Verify the specific suffix 'BAZ' against official Nexperia documentation to confirm the exact reel packaging configuration and manufacturing lot details. Ensure the DFN1110D-3 footprint matches the target PCB layout. Confirm RoHS compliance status through the manufacturer's restricted substances declaration before final procurement approval.
Select this component when a leadless SMD package is required to minimize footprint area compared to traditional SOT-23 transistors. The AEC-Q101 qualification makes it suitable for automotive environments where high reliability is mandatory. Consider the 45 V rating for low-voltage switching or amplification tasks within mobile and consumer electronics systems.
This part belongs to the BC857 series of PNP general-purpose transistors from Nexperia. It serves as the complement to the BC847 NPN series. The BC857AQBAZ variant specifically denotes the DFN1110D-3 package, distinguishing it from other package options like SOT-323 or SOT-883 within the same electrical family.
Direct substitutes include other BC857 variants with identical electrical ratings but different packages, such as BC857AW (SOT-323). For pin-compatible replacements in the same package family, verify availability of other DFN1110D-3 parts. Cross-reference with BC857AM for similar performance in the DFN1006-3 package if slight dimensional changes are acceptable.