BC857B,215

Overview

The Nexperia BC857B,215 is a PNP general-purpose bipolar junction transistor (BJT) housed in an SOT-23 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The device supports a continuous collector current (IC) of 100 mA with a power dissipation (Pd) of 250 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 220 at 2 mA and a transition frequency (fT) of 100 MHz. Operating temperatures range from -65°C to +150°C.

Feature Summary

• PNP polarity configuration for general-purpose switching and amplification
• Ultra-small SOT-23 leaded surface-mount plastic package
• AEC-Q101 qualified for automotive reliability standards

Applications

• General-purpose small signal DC applications
• Low and medium frequency AC applications
• Mobile device circuitry

Procurement Notes

Verify the specific suffix

Selection Notes

Select this component when a PNP transistor with 45 V breakdown and 100 mA current capability is required in an SOT-23 footprint. Ensure the design accommodates the 250 mW power dissipation limit and verify that the hFE binning meets the circuit's gain requirements. Confirm AEC-Q101 qualification is necessary for the target application environment.

Part Context

This part belongs to the BC857 series of general-purpose PNP transistors manufactured by Nexperia. The series includes variants with different gain ranges and packages, such as the BC857AM in DFN1006-3 or the BC857BQC in DFN1412D-3. The BC857B,215 specifically utilizes the standard SOT-23 package and carries the ,215 tape-and-reel designation.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official Nexperia cross-reference tools or datasheets for compatible alternatives.