BC857BDW1T1G

Overview

The onsemi BC857BDW1T1G is a dual general-purpose PNP transistor housed in the SOT-363 (SC-88) surface-mount package. It features a collector-emitter voltage (VCEO) of -45 V and a collector-base voltage (VCBO) of -50 V. The device supports a continuous collector current of -100 mA with a peak current rating of -200 mA. Total device dissipation is rated at 380 mW, with a thermal resistance (RthJA) of 328 °C/W. The DC current gain (hFE) ranges from 220 to 475 at IC = -10 mA and VCE = -5.0 V. The transition frequency (fT) is specified at 100 MHz. Operating junction and storage temperatures range from -55°C to +150°C.

Feature Summary

• Dual PNP configuration within a compact SOT-363 package for low-power surface mount applications.
• AEC-Q101 qualified with PPAP capability for automotive and high-reliability environments.
• Designed for general-purpose amplifier circuits with standardized pinout compatibility.

Applications

• General purpose amplifier circuits
• Automotive electronic systems requiring AEC-Q101 qualification
• Low power surface mount signal processing

Procurement Notes

Verify the specific ordering suffix 'DW1T1G' corresponds to the SOT-363 package and 3,000-unit tape and reel shipping format. Confirm that the 'B' grading indicates the required hFE range of 220 to 475 for the intended circuit design. Ensure compliance with Pb-Free and RoHS standards if environmental regulations apply to the final assembly process.

Selection Notes

Select this component when a dual PNP transistor is required in an SOT-363 footprint. The BC857 variant provides a -45 V VCEO rating, distinguishing it from the BC856 (-65 V) and BC858 (-30 V) series. Verify that the 380 mW total power dissipation and 328 °C/W thermal resistance are sufficient for the expected ambient temperature and PCB copper area constraints.

Part Context

This part belongs to the BC856/BC857/BC858 family of dual general-purpose transistors manufactured by onsemi. These devices share the same SOT-363 mechanical outline but differ in voltage ratings and current gain bins. The BC857BDW1T1G specifically denotes the B-grade gain bin within the dual PNP configuration.

Replacement Considerations

Direct functional substitutes include the BC856BDW1T1G (higher voltage rating) and BC858CDW1T1G (lower voltage rating). Other manufacturers offer equivalent dual PNP transistors in SOT-363 packages, such as the BCM857BS or BC857S, though pinout and electrical tolerances must be verified against the original datasheet.

FAQ

What is the marking code for the BC857BDW1T1G?

The device marking code is '3F'.

What is the maximum collector current for this device?

The continuous collector current is -100 mA, with a peak collector current rating of -200 mA.

Is this component suitable for automotive applications?

Yes, the 'S' prefix indicates it is AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.