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The BC857BS-13-F is a dual PNP bipolar junction transistor manufactured by Diodes Incorporated. It utilizes silicon epitaxial die construction and is housed in an SOT-363 surface-mount package. The device features two independent PNP transistors within a single compact footprint, designed for general-purpose switching and amplification applications. Key electrical specifications include a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. The component supports a wide operating temperature range from -55°C to +150°C and offers a gain-bandwidth product of 100 MHz.
Verify the specific ordering suffix against manufacturer documentation to confirm packaging format and reel specifications. Ensure compatibility with standard SMT assembly processes for the SOT-363 case style. Cross-reference RoHS compliance status with the latest environmental declaration documents provided by Diodes Incorporated prior to procurement.
Select this component when a dual PNP configuration is required in a minimal board area using the SOT-363 footprint. Compare the 100 mA collector current and 45 V breakdown voltage ratings against circuit demands. Consider the 100 MHz transition frequency for applicable signal processing speeds relative to alternative single-transistor solutions.
This part belongs to the BC857 series of small-signal PNP transistors produced by Diodes Incorporated. The series includes various configurations such as single (BC857A/B/C) and dual (BC857BS/ST) variants. The BC857BS-13-F specifically denotes the dual version packaged in SOT-363, offering complementary functionality to the BC847 NPN series.
Direct functional substitutes within the same family include BC857BS-7-F. Other compatible dual PNP transistors in SOT-363 packages may be considered if electrical parameters match or exceed the original specifications.