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The BC857BS-QF is a dual PNP bipolar junction transistor manufactured by Nexperia, housed in the SOT363 (SC-88) surface-mount package. It features closely matched current gain characteristics and low collector-emitter saturation voltage. Key electrical parameters include a maximum DC collector current of 100 mA, a collector-emitter voltage of 45 V, and a collector-base voltage of 50 V. The device operates within a temperature range of -55°C to +150°C, with a total power dissipation of 300 mW.
Verify the AEC-Q101 qualification status directly with the manufacturer or authorized distributors, as this is a critical requirement for automotive applications. Confirm the specific suffix 'QF' corresponds to the intended packaging format and ensure compatibility with existing PCB footprints before finalizing procurement orders.
Select this component when space-constrained designs require dual PNP transistors with matched characteristics. The SOT363 package offers significant board area reduction compared to discrete single transistors. Ensure the application demands do not exceed the 100 mA continuous current limit or the 300 mW thermal dissipation capacity under operating conditions.
This part belongs to the BC857 series of small-signal PNP transistors. It serves as the PNP complement to the BC847BS NPN/NPN dual transistor. The series is widely used in consumer electronics and automotive systems where compact size and reliable switching performance are required.
Direct substitutes include the BC857BS without the QF suffix if automotive qualification is not mandatory. For pin-compatible alternatives, consider other dual PNP transistors in the SOT363 package from Nexperia or other manufacturers, ensuring electrical parameters match or exceed the original specifications.