SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC857BS-TP is a dual PNP bipolar junction transistor array manufactured by Micro Commercial Components. It integrates two matched PNP transistors in a single SOT-363 surface-mount package. The device supports a maximum collector-emitter voltage of 45V and a continuous collector current of 200mA per transistor. Key electrical characteristics include a transition frequency of 200MHz, a maximum power dissipation of 300mW, and a DC current gain (hFE) minimum of 220 at 2mA and 5V. The saturation voltage is specified at 650mV under standard test conditions.
Verify the specific manufacturer lot code and date code upon receipt to ensure compliance with project timelines. Confirm RoHS3 compliance status through the official datasheet or supplier documentation before integration into environmentally regulated assemblies. Check for any recent Product Change Notifications regarding packaging or assembly site updates that may affect supply chain continuity.
Select this component when a dual PNP configuration is required in a small outline package. Ensure the application voltage does not exceed the 45V collector-emitter breakdown limit. Consider the 300mW power dissipation constraint for thermal management in enclosed spaces. Verify that the 200mA current rating meets the load requirements without exceeding safe operating area limits.
This part belongs to the BC857 series of small signal PNP transistors produced by Micro Commercial Components. It serves as the dual-array variant of the single BC857 device, offering complementary functionality to the BC847BS NPN array. The SOT-363 package provides a standardized mounting solution compatible with automated surface-mount assembly processes.
The maximum power dissipation is 300mW.
It contains two matched PNP transistors in a single package.
The minimum DC current gain (hFE) is 220, measured at 2mA collector current and 5V collector-emitter voltage.