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The BC857BS,115 is a small-signal PNP bipolar junction transistor manufactured by Nexperia. It is housed in a surface-mount SC-88 (SOT-363) package with six pins. The device supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. Key electrical characteristics include a DC current gain (hFE) minimum of 200 at specified test conditions, a transition frequency of 100 MHz, and a maximum power dissipation of 300 mW. The component operates within a temperature range from -65°C to +150°C junction temperature.
Verify the specific suffix against official Nexperia documentation to confirm package type and qualification status. Ensure that the ordered part matches the required pin configuration and thermal specifications for the target application environment. Cross-reference datasheet revisions to confirm consistency in electrical parameters before finalizing procurement orders.
Select this component when a dual PNP configuration is required in a minimal footprint. The SC-88 package offers space efficiency compared to discrete single transistors. Consider the 300 mW power dissipation limit and the 45 V voltage rating to ensure operation remains within safe limits under expected load conditions.
This part belongs to the BCM857 series of matched dual transistors produced by Nexperia. It shares functional similarities with other members of the family but differs in packaging and specific electrical tolerances. The BC857BS variant specifically utilizes the SC-88 form factor, distinguishing it from SOT-323 or TSSOP alternatives in the same product line.
BCM857BV,115
The maximum power dissipation is 300 mW.
Yes, the component is qualified according to the AEC-Q101 standard for automotive use.
The minimum DC current gain is specified as 200.