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The onsemi BC857BTT1G is a surface-mount PNP bipolar junction transistor housed in the SOT-416 (SC-88) package. It features a maximum collector current of -100 mA and a collector-emitter voltage rating of -45 V, with a collector-base voltage of -50 V. The device has a minimum DC current gain (hFE) of 220 and a transition frequency of 100 MHz. Power dissipation is rated at 200 mW. Operating temperatures range from -65°C to +150°C, and it complies with AEC-Q101 automotive standards.
Verify the specific suffix TT1G against official onsemi documentation to confirm the exact tape-and-reel quantity and packaging configuration. Ensure the component meets the required AEC-Q101 qualification level if used in automotive systems. Cross-reference the datasheet revision date to validate electrical characteristics against your design specifications.
Select this component when an automotive-qualified PNP transistor is required in a compact SC-88 package. It serves as a complement to NPN counterparts like the BC847 series. Consider the 200 mW power dissipation limit and -45 V voltage rating during circuit design to ensure operation within safe limits.
This part belongs to the BC857 family of small-signal PNP transistors manufactured by onsemi. The BC857 series is widely recognized for its versatility in general-purpose switching and amplification tasks. The BC857B variant specifically denotes a binning category for higher current gain compared to standard grades.
Compatible substitutes include the BC857BT from Central Semiconductor and the BC857BS from Nexperia. Verify pinout compatibility and electrical parameter margins before substitution.