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Product Detailed Parameters
- Description：TRANS 2PNP 45V 100MA SOT-563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：150mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The BC857BV-7 is a dual PNP small signal surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial die construction and is housed in an SOT563 package. The device features a collector-emitter voltage (VCEO) of -45 V, a collector-base voltage (VCBO) of -50 V, and an emitter-base voltage (VEBO) of -5.0 V. Maximum continuous collector current (IC) is rated at -100 mA with a power dissipation (PD) of 260 mW. DC current gain (hFE) ranges from 220 to 475 at IC = -2.0 mA. The transition frequency (fT) is 100 MHz. Operating temperature spans from -55°C to +150°C.
Feature Summary
- Dual PNP configuration within an ultra-small SOT563 surface mount package
- Epitaxial die construction for high reliability
- Qualified to JEDEC standards for high reliability applications
Applications
- General purpose switching and amplification circuits
- Automotive electronics requiring specific change control protocols
- High reliability consumer and industrial electronic devices
Procurement Notes
Verify the exact ordering suffix matches the required packaging specifications. Confirm that the component meets RoHS 3 compliance requirements if mandated by your regional regulations. Ensure the manufacturing facility holds IATF 16949 certification if automotive grade traceability is necessary for your supply chain.
Selection Notes
Select this component when a compact dual PNP solution is required. Verify that the -45 V collector-emitter voltage rating aligns with your circuit's maximum operating conditions. Check the thermal resistance values against your PCB layout to ensure adequate heat dissipation under expected load currents.
Part Context
This part belongs to the BC857BV series of dual PNP transistors. It serves as the complementary counterpart to the BC847BV NPN type. The device is designed for surface mount assembly, offering a space-saving alternative to through-hole packages while maintaining robust electrical performance for general signal processing tasks.
Replacement Considerations
BC857BV-7-F
FAQ
What is the maximum power dissipation for the BC857BV-7?
The maximum power dissipation is 260 mW.
Is the BC857BV-7 suitable for automotive applications?
Yes, it is qualified to JEDEC standards for high reliability. For automotive applications requiring specific change control, refer to the related automotive grade parts.
What is the ESD protection rating for this device?
The Human Body Model (HBM) rating is 4000 V (JEDEC Class 3A), and the Charged Device Model (CDM) rating is 1000 V (Class IV).
