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The BC857BW-G is a single PNP bipolar junction transistor manufactured by Comchip Technology. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a maximum DC collector current of 100 mA with a power dissipation of 150 mW. It features a gain-bandwidth product (fT) of 100 MHz, a saturation voltage of 650 mV, and a DC current gain (hFE) ranging from 220 to 475. Operating temperatures span from -65°C to +150°C.
Verify the manufacturer designation as Comchip Technology on all documentation. Confirm the specific suffix 'G' corresponds to the RoHS-compliant version detailed in the official datasheet. Ensure the ordering information matches the exact part number BC857BW-G to avoid confusion with similar variants from other manufacturers or different gain ranges.
Select this component when a small-form-factor PNP transistor is required for low-current applications. The SOT-323-3 package is suitable for space-constrained designs. Verify that the 100 mA current limit and 150 mW power dissipation meet the circuit requirements. Check that the hFE range of 220 to 475 aligns with the necessary gain specifications for the intended application.
This component belongs to the BC857 series of general-purpose PNP transistors. It serves as a complement to NPN devices like the BC847 series within standard discrete transistor families. The SOT-323 package provides a compact footprint compared to larger through-hole alternatives, facilitating its use in modern portable electronics and dense PCB layouts.
Cross-reference with BC857BW from Nexperia or ABC857CW-HF from Comchip Technology if higher gain or automotive qualification is required. Verify pinout compatibility and electrical limits before substitution.