BC857BWT1

$0.03

Description：TRANS PNP 45V 0.1A SC70-3
Series：-

SKU:bbc246933561 Category: Single Bipolar Transistors Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS PNP 45V 0.1A SC70-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
Power - Max：150 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70-3 (SOT323)
Grade：-
Qualification：-

Download product information

BC857BWT1

Overview

The BC857BWT1 is a PNP silicon general-purpose transistor from the onsemi BC856/7/8 series, housed in an SC-70/SOT-323 surface-mount package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device offers a DC current gain (hFE) range of 150 to 475 at Ic = -2.0 mA and Vce = -5.0 V. Electrical characteristics include a transition frequency of 100 MHz and a maximum power dissipation of 150 mW.

Feature Summary

Designed for low-power surface mount applications using the compact SC-70/SOT-323 package.
Suitable for general-purpose amplifier applications with high DC current gain.
Available in lead-free packages compliant with RoHS standards.

Applications

General purpose amplification circuits
Low power surface mount designs

Procurement Notes

Verify the specific ordering suffix 'WT1' corresponds to the tape and reel shipping configuration as documented in the official datasheet. Confirm that the component meets Pb-Free requirements if environmental compliance is necessary for the assembly process. Ensure the SC-70/SOT-323 package dimensions align with the intended PCB footprint design constraints.

Selection Notes

Select this component for applications requiring a PNP transistor with a -45 V collector-emitter breakdown voltage and a maximum continuous current of -100 mA. The device is appropriate for low-power surface mount designs where the SC-70/SOT-323 package provides space efficiency. Consider the hFE range of 150 to 475 for biasing calculations in amplifier stages.

Part Context

This part belongs to the BC856BWT1, BC857BWT1, and BC858AWT1 series published by Semiconductor Components Industries, LLC (onsemi). The series includes complementary NPN devices such as the BC846 and BC847 variants. These transistors are categorized as preferred devices for future use, offering standardized performance across the family.