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The BC857C-7-F is a PNP small-signal transistor manufactured by Diodes Incorporated, housed in an SOT23 surface-mount package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device offers a DC current gain (hFE) ranging from 420 to 800 at -2 mA and -5 V. Electrical characteristics include a transition frequency of 200 MHz and a power dissipation capacity of 310 mW. Operating temperatures span from -55 °C to +150 °C.
Verify the specific suffix against official manufacturer documentation to confirm exact electrical tolerances and packaging configurations. Ensure that the procurement channel provides authentic components matching the datasheet specifications. Confirm compliance requirements such as RoHS status directly with the supplier prior to finalizing orders.
Select this component when high current gain is required for signal amplification or precise switching control. The SOT23 package facilitates automated assembly processes. Consider thermal derating curves for high-temperature environments to ensure reliable operation within specified limits.
This part belongs to the BC856A–BC858C family of PNP transistors designed for general-purpose use. The 'C' suffix denotes a specific binning range for higher current gain compared to 'A' or 'B' variants. These devices are widely used in consumer electronics and industrial control systems requiring compact, reliable switching solutions.
BC857CQ-7-F
The maximum collector-emitter voltage (VCEO) is -45 V.
Yes, automotive-compliant versions are available under separate datasheets within the same product family.
The DC current gain (hFE) ranges from 420 to 800 at a collector current of -2 mA and VCE of -5 V.