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Product Detailed Parameters
- Description：TRANS PNP 45V 0.1A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：330 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BC857CB5003XT is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and operates within a temperature range of -65°C to +150°C. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a continuous DC collector current of 100 mA with a power dissipation rating of 330 mW. It features a transition frequency (fT) of 250 MHz and a DC current gain (hFE) ranging from 420 to 800.
Feature Summary
- High DC current gain (hFE) ranging from 420 to 800 for effective signal amplification
- Wide operating temperature range extending up to +150°C for robust thermal performance
- Low saturation voltage characteristics suitable for efficient switching applications
Applications
- General-purpose analog signal amplification circuits
- Digital logic interface and switching applications
- Audio pre-amplifier stages
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact binning and packaging details. Confirm RoHS compliance status through the manufacturer's material content sheet. Ensure the component meets automotive qualification requirements if applicable to your design. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement.
Selection Notes
Select this component when high current gain and wide temperature tolerance are required in a compact SMD form factor. The BC857C series offers superior hFE compared to standard general-purpose transistors. Consider the 330 mW power dissipation limit and thermal management needs for PCB layout. Verify that the 100 mA collector current rating aligns with the circuit load requirements.
Part Context
This part belongs to the BC857 family of PNP general-purpose transistors produced by Infineon Technologies. These devices are widely used in consumer electronics and industrial equipment due to their reliability and small footprint. The BC857CB5003XT variant specifically denotes the Binning code and tape-and-reel packaging configuration provided by the manufacturer.
Replacement Considerations
BC857CWH6327XTSA1
FAQ
What is the maximum DC current gain (hFE) for the BC857CB5003XT?
The maximum DC current gain (hFE) is 800.
Is the BC857CB5003XT qualified for automotive applications?
Yes, the BC857C series is AEC-Q100 qualified.
What is the maximum operating temperature for this transistor?
The maximum operating temperature is +150°C.
