BC857CDW1T1G

Overview

The onsemi BC857CDW1T1G is a dual general-purpose PNP bipolar junction transistor housed in an SOT-363 surface-mount package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device provides a DC current gain ranging from 220 to 475 at -10 mA. Electrical characteristics include a collector-base breakdown voltage of -50 V, an emitter-base breakdown voltage of -5.0 V, and a transition frequency of 100 MHz. Total power dissipation is rated at 380 mW, with an operating temperature range spanning from -55 °C to +150 °C.

Feature Summary

• Dual configuration integrating two independent PNP transistors within a single compact SOT-363 package for space-efficient circuit design.
• Qualified for automotive applications under AEC-Q101 standards, supporting unique site and control change requirements.

Applications

• General purpose amplifier circuits
• Low power surface mount applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm pinout style and marking codes. Ensure compliance with RoHS directives and Pb-free packaging requirements. Confirm that the selected variant meets the necessary AEC-Q101 qualification if intended for automotive use. Validate thermal resistance parameters against the specific PCB layout conditions before finalizing procurement specifications.

Selection Notes

Select this component when a dual PNP configuration is required in a minimal footprint. The BC857 series offers higher current gain compared to the BC856 series. Verify that the -45 V collector-emitter voltage rating aligns with the circuit's maximum supply rails. Consider the 380 mW total power dissipation limit and derating curves for high-temperature environments.

Part Context

This part belongs to the BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, and BC858CDW1T1G Series family. These transistors are designed for general-purpose amplifier applications and share the same SOT-363/SC-88 housing optimized for low-power surface-mount technologies.

Replacement Considerations

SBC857CDW1T1G is a direct equivalent within the same series. BC857BDW1T1G shares the package but differs in gain classification. Single-transistor alternatives like BC857ALT1G require separate board space.