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The BC857CE6327HTSA1 is a PNP bipolar junction transistor from Infineon Technologies, housed in an SOT-23-3 surface-mount package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device has a power dissipation rating of 330 mW and a transition frequency of 250 MHz. DC current gain ranges from 420 to 800. It operates within a temperature range of -65°C to +150°C and holds AEC-Q100 qualification.
Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm reel packaging and RoHS compliance status. Confirm end-of-life or obsolescence status directly with the manufacturer prior to design finalization, as availability may be restricted. Ensure component authenticity through authorized distribution channels only.
Select this component when high current gain is required for PNP switching applications in space-constrained designs. The SOT-23-3 package suits automated surface-mount assembly. Verify that the 45V voltage rating and 100mA current limit align with circuit requirements. Consider thermal management due to the 330mW power dissipation limit in enclosed environments.
This part belongs to the BC857 series of general-purpose PNP transistors. It shares the same silicon technology and basic electrical characteristics as the BC857C single transistor variant but is distinguished by its specific ordering code and packaging configuration. It serves as a standard discrete semiconductor solution for general electronics.
BC857CE6327 is a compatible alternative offering identical electrical specifications and pinout compatibility.