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The BC857CW,115 is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes an SOT-323 (SC-70) surface-mount package. Key electrical parameters include a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. The device features a collector-base voltage of 50 V and an emitter-base voltage of 5 V. Power dissipation is rated at 200 mW with a gain-bandwidth product of 100 MHz. Operating temperature ranges from -65 °C to +150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm exact binning or tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's datasheet. Ensure the selected variant matches the required SOT-323 package dimensions for PCB layout compatibility. Cross-reference part numbers with authorized distributors to avoid counterfeit components.
Select this component for designs requiring a compact PNP switching solution in space-constrained environments. The SOT-323 package offers board space savings compared to larger packages while maintaining comparable power dissipation. Verify that the 100 mA current rating and 45 V voltage limits align with the circuit's operational requirements. Consider thermal management constraints given the 200 mW power dissipation limit.
This component belongs to Nexperia's broad portfolio of general-purpose bipolar transistors. It serves as a complement to NPN variants within the same series, facilitating push-pull or differential amplifier configurations. The device is designed for cost-effective mass production in consumer electronics and industrial control systems where small form factors are critical.
Official substitutes include the BC857W,115 which shares identical electrical characteristics and pinout. Other compatible alternatives may exist within the BC857 family, but verification of package type and hFE binning is required before substitution.