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The BC857CW,135 is a single PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-323 (SC-70) surface-mount package. The device supports a maximum continuous collector current of 100 mA and offers high voltage ratings with a collector-emitter breakdown voltage of 45 V and a collector-base breakdown voltage of 50 V. It features a low saturation voltage of 250 mV and a power dissipation capacity of 200 mW. The component operates within a temperature range of -65°C to +150°C and includes a gain-bandwidth product of 100 MHz.
Verify the specific ordering suffix against official Nexperia documentation to confirm the reel packaging configuration. Ensure the requested part number matches the exact electrical characteristics required for the target application. Cross-reference the manufacturer's datasheet for accurate handling and storage guidelines related to moisture sensitivity levels.
Select this component when a compact PNP transistor with high voltage tolerance is required. The SOT-323 package is suitable for dense surface-mount designs. Compare the 100 mA current rating and 200 mW power dissipation against load requirements. Consider the 100 MHz transition frequency for moderate-speed switching tasks.
This component belongs to the Nexperia BC857 series of general-purpose PNP transistors. The series provides various gain grades and package options to suit different design constraints. The BC857CW variant specifically denotes the standard gain version packaged in the industry-standard SOT-323 form factor.
BC857AW,135: Offers identical voltage and current ratings but may differ in DC current gain specifications. BC857W,135: Provides similar electrical parameters in the same package; verify gain banding requirements before substitution.