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Product Detailed Parameters
- Description：TRANS PNP 45V 0.1A PG-SOT323
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：250 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：PG-SOT323
- Grade：-
- Qualification：-
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Overview
The BC857CWH6327XTSA1 is a dual PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-363-6 surface-mount package. The device features a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 45 V. Key electrical parameters include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation (Pd) of 250 mW. The component offers a gain-bandwidth product (fT) of 250 MHz and operates within a temperature range of -65°C to +150°C.
Feature Summary
- Dual PNP configuration for compact circuit integration
- High-frequency performance with 250 MHz transition frequency
- Automotive qualification compliant with AEC-Q100 standards
Applications
- General-purpose switching applications
- Signal amplification circuits
- Automotive electronic systems requiring qualified components
Procurement Notes
Verify the specific suffix 'C' indicates the required DC current gain (hFE) binning, as this affects amplification characteristics. Confirm the 'H6327XTSA1' suffix corresponds to the correct tape-and-reel packaging format for automated assembly. Ensure the source document explicitly lists this exact part number to avoid confusion with single-transistor variants or other gain bins within the BC857 family.
Selection Notes
Select this component when a dual PNP transistor is required in an SOT-363 package to save board space. The 45 V VCEO rating suits low-voltage signal processing tasks. Verify that the 100 mA continuous collector current meets the load requirements. The AEC-Q100 qualification makes it suitable for automotive environments where reliability under thermal stress is critical.
Part Context
This part belongs to the BC857 series of general-purpose PNP transistors from Infineon. While the base BC857 model exists, the 'C' suffix typically denotes a specific hFE range, and the 'WH6327XTSA1' suffix defines the packaging and reel specifications. It serves as a complementary device to NPN counterparts like the BC847 series in push-pull or differential amplifier configurations.
FAQ
What is the difference between BC857C and BC857B?
The primary difference lies in the DC current gain (hFE) ranges. The 'C' suffix typically specifies a higher minimum gain compared to the 'B' suffix, which is crucial for designing high-gain amplifier stages.
Is the BC857CWH6327XTSA1 suitable for automotive use?
Yes, the datasheet indicates AEC-Q100 qualification, confirming its suitability for automotive electronic applications requiring robust performance under varying environmental conditions.
