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The BC857S is a dual PNP small-signal transistor manufactured by Diotec Semiconductor in an SOT-363 surface-mount package. It features a collector-emitter voltage (VCEO) of -45 V and a maximum DC collector current (IC) of 100 mA. The device provides a minimum DC current gain (hFE) of 220 at IC = 2 mA and VCE = 5 V, with a transition frequency (fT) of 100 MHz. Total power dissipation is rated at 250 mW per device when mounted on a PCB with 3 mm² copper pads. Operating junction temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix against official documentation before procurement. Standard versions are commercial/industrial grade. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm that the required reliability grade matches the application needs, as standard parts are not intended for life-support systems without customer validation.
Select the BC857S for designs requiring two matched PNP transistors in a compact footprint. Ensure the circuit operates within the -45 V collector-emitter voltage limit and 100 mA current rating. Consider the thermal resistance of 420 K/W per device when calculating heat dissipation. Verify if automotive-grade variants (-Q/-AQ) are necessary for specific environmental or reliability requirements.
The BC857S belongs to the BC85x series of SMD general-purpose PNP transistors. It is functionally complementary to the BC847S NPN array. The component utilizes epitaxial die construction and is available in the SOT-363 case. Marking code '3F' identifies this specific part number on the package surface.
BC856S: Offers higher voltage ratings but shares the same package and pinout.