BC857SE6433HTMA1

Overview

The BC857SE6433HTMA1 is a PNP silicon small-signal transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and configured as a single unit. The device supports a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of -45 V. Key electrical parameters include a collector-base voltage (VCBO) of -50 V, an emitter-base voltage (VEBO) of -5 V, and a power dissipation (Pd) of 330 mW. The transition frequency (fT) is rated at 250 MHz, with a DC current gain (hFE) ranging from 420 to 800. It operates within a temperature range of -65°C to +150°C.

Feature Summary

• High DC current gain suitable for amplification applications
• Automotive-grade qualification ensuring reliability
• Compact surface-mount packaging for space-constrained designs

Applications

• General-purpose signal amplification
• Switching circuits in consumer electronics
• Automotive electronic control modules

Procurement Notes

Verify the specific suffix 'S' against official documentation to confirm the exact hFE binning class, as this determines the gain range. Confirm RoHS compliance status through the manufacturer's certificate of conformity. Ensure the component source is authorized to prevent counterfeit risks, particularly given the high-volume nature of standard BJT packages.

Selection Notes

Select this component when a PNP transistor with high gain (420-800) is required in an SOT-23 form factor. Compare fT and VCEO requirements against circuit needs. Verify that the thermal dissipation capabilities align with the expected load conditions in the target application environment.

Part Context

This part belongs to the BC857 series of PNP transistors. The 'E6433HTMA1' suffix indicates specific packaging and ordering details managed by Infineon. It serves as a general-purpose alternative to other industry-standard small-signal PNP devices in similar packages.

Replacement Considerations

Consult official substitution guides for direct pin-compatible alternatives. Generic equivalents may differ in hFE ranges or switching speeds. Verify parameter equivalence before implementation.