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The BC858BLT3G is a PNP silicon general-purpose transistor from the onsemi BC856ALT1G series, housed in an SOT-23 (TO-236) surface-mount package. It features a collector-emitter breakdown voltage of -30 V and a continuous collector current rating of -100 mA. The device operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 225 mW. Electrical characteristics include a DC current gain ranging from 150 to 475 at specific test conditions, a transition frequency of 100 MHz, and low saturation voltages for efficient switching.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and reel quantity. Confirm that the component meets required automotive or industrial qualification standards if applicable. Ensure compatibility with existing PCB footprint dimensions and soldering profiles during integration.
Select this component when a compact PNP transistor with a 30 V collector-emitter voltage rating is required. Consider the specified DC current gain ranges and thermal resistance values for circuit stability. Evaluate the SOT-23 package constraints against available board space and thermal management requirements.
This part belongs to the BC856ALT1G series, which includes variants with different voltage ratings such as the BC856 (-65 V) and BC857 (-45 V). The BC858 variant specifically provides a -30 V rating, distinguishing it within the family for lower voltage general-purpose applications.
BC858BLT1G