BC858BWE6327

BC858BWE6327

$0.02
  • Description:TRANS PNP 30V 0.1A PG-SOT323-3-1
  • Series:-

SKU:b245fe4fd1aa Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 30V 0.1A PG-SOT323-3-1
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
  • Power - Max:250 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323-3-1
  • Grade:-
  • Qualification:-

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BC858BWE6327

Overview

The BC858BWE6327 is a PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-323-3 package and configured as a single element. The device supports a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 30 V. Key electrical parameters include a collector-base voltage (VCBO) of 30 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation (Pd) of 330 mW. The component features a gain-bandwidth product (fT) of 250 MHz, with a DC current gain (hFE) ranging from 420 to 800. It operates within a temperature range of -65 °C to +150 °C.

Feature Summary

  • Utilizes silicon technology for reliable small-signal amplification and switching applications.
  • Designed for surface-mount installation in compact electronic circuits.
  • Provides high DC current gain suitable for low-power signal processing tasks.

Applications

  • General-purpose signal amplification
  • Electronic switching circuits
  • Low-power analog signal processing

Procurement Notes

Verify the specific suffix E6327 to confirm packaging and compliance details. Confirm availability status as production lifecycle data indicates potential obsolescence or end-of-life conditions. Ensure the sourcing channel provides official documentation matching the manufacturer's specifications for quality assurance.

Selection Notes

Select this component when a PNP transistor with moderate voltage ratings and high current gain is required in a compact SOT-323 form factor. Consider the thermal limits and current capabilities relative to the circuit design requirements. Verify compatibility with existing PCB footprints and assembly processes for surface-mount technology.

Part Context

This part belongs to the BC858 series of PNP transistors from Infineon Technologies. It shares functional similarities with other members of the family but is distinguished by its specific gain binning and packaging configuration. The series is commonly used in consumer electronics and industrial control systems requiring small-signal handling.

Replacement Considerations

Consult official substitution guides for compatible parts. Verify pinout compatibility and electrical parameter equivalence before replacing. Cross-reference with similar PNP transistors in the SOT-323 package if direct substitutes are unavailable.

BC858BWE6327BC858BWE6327
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