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The BC858BWE6327 is a PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-323-3 package and configured as a single element. The device supports a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 30 V. Key electrical parameters include a collector-base voltage (VCBO) of 30 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation (Pd) of 330 mW. The component features a gain-bandwidth product (fT) of 250 MHz, with a DC current gain (hFE) ranging from 420 to 800. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix E6327 to confirm packaging and compliance details. Confirm availability status as production lifecycle data indicates potential obsolescence or end-of-life conditions. Ensure the sourcing channel provides official documentation matching the manufacturer's specifications for quality assurance.
Select this component when a PNP transistor with moderate voltage ratings and high current gain is required in a compact SOT-323 form factor. Consider the thermal limits and current capabilities relative to the circuit design requirements. Verify compatibility with existing PCB footprints and assembly processes for surface-mount technology.
This part belongs to the BC858 series of PNP transistors from Infineon Technologies. It shares functional similarities with other members of the family but is distinguished by its specific gain binning and packaging configuration. The series is commonly used in consumer electronics and industrial control systems requiring small-signal handling.
Consult official substitution guides for compatible parts. Verify pinout compatibility and electrical parameter equivalence before replacing. Cross-reference with similar PNP transistors in the SOT-323 package if direct substitutes are unavailable.